Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S85BG

Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

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Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O - 71V3557S85BG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O
71V3557S85BG
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S85BG
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
Memory - 71V3557S85BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3557S85BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3557S85BG
Integrated Circuits (ICs) - Memory - Memory 71V3557S85BG
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3557S85BG 71V3557S85BG 71V3557S85BG
Product Name 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Cycle Time 85 ns 8.5 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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