Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S85BG

Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O - 71V3557S85BG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O
71V3557S85BG
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S85BG
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3557S85BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3557S85BG
Integrated Circuits (ICs) - Memory - Memory 71V3557S85BG
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71V3557S85BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3557S85BG 71V3557S85BG 71V3557S85BG
Product Name 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 85 ns 8.5 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28310552 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - RAM - MT5C2568C-25/883C - 1223286-MT5C2568C-25/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 71256L25Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details