Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S75BGG

Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
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Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
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Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O - 71V3557S75BGG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O
71V3557S75BGG
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S75BGG
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
 - 71V3557S75BGG - Rochester Electronics
Newburyport, MA, United States
128K X 36, 256K X 18, 3.3V Synchronous ZBT SRAM

128K X 36, 256K X 18, 3.3V Synchronous ZBT SRAM

Supplier's Site Datasheet
Memory - 71V3557S75BGG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 7.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 7.5 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V3557S75BGG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V3557S75BGG
Integrated Circuits (ICs) - Memory 71V3557S75BGG
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3557S75BGG 71V3557S75BGG 71V3557S75BGG 71V3557S75BGG
Product Name 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Cycle Time 80 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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