Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O 71V3556S100PFG

Description
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.
Request a Quote Datasheet
Description
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O - 71V3556S100PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O
71V3556S100PFG
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O 71V3556S100PFG
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.

The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
 - 71V3556S100PFG - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3556S100PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3556S100PFG
Integrated Circuits (ICs) - Memory - Memory 71V3556S100PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V3556S100PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3556S100PFG 71V3556S100PFG 71V3556S100PFG 71V3556S100PFG
Product Name 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 100 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 40060127-002 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - RAM - MT5C1005C-25L-883C - 1204596-MT5C1005C-25L-883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
Memory - 71256SA25TP - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details
Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details