Integrated Device Technology Memory 71V25761Y5S200PFG

Description
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
Request a Quote Datasheet
Description
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V25761Y5S200PFG - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

Supplier's Site Datasheet
Memory - 71V25761Y5S200PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x20)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x20)

Buy Now

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V25761Y5S200PFG 71V25761Y5S200PFG
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Access Time 3.1 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882874P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 71024S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Memory - MT5C1009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details