Integrated Device Technology Memory 71V25761Y5S200PFG

Description
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
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Description
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
Request a Quote Datasheet

Suppliers

Company
Product
Description
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 - 71V25761Y5S200PFG - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

Supplier's Site Datasheet
Memory - 71V25761Y5S200PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x20)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x20)

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Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V25761Y5S200PFG 71V25761Y5S200PFG
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Access Time 3.1 ns
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