Integrated Device Technology 3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O 71V25761S200PFG

Description
The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM .
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Suppliers

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Product
Description
Supplier Links
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O - 71V25761S200PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O
71V25761S200PFG
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O 71V25761S200PFG
The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM .

The 71V25761 3.3V CMOS Synchronous SRAM is organized as 128K x 36 and contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71V25761S200PFG - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71V25761S200PFG
Memory IC and Storage Component 774-71V25761S200PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP Product overview: 71V25761S200PFG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V25761S200PFG can be used for catalog matching and distributor lookup.

IC SRAM 4.5MBIT PARALLEL 100TQFP Product overview: 71V25761S200PFG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V25761S200PFG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - 71V25761S200PFG - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V25761S200PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V25761S200PFG
Integrated Circuits (ICs) - Memory - Memory 71V25761S200PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V25761S200PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V25761S200PFG 774-71V25761S200PFG 71V25761S200PFG 71V25761S200PFG 71V25761S200PFG
Product Name 3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 200 MHz 200 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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