128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
IC SRAM 4.5MBIT PARALLEL 119PBGA
| Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V25761S200BG | 71V25761S200BG | 71V25761S200BG |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Package Type | BGA; BGA119 | BGA; 119-BGA | |
| Access Time | 3.1 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) |
