Integrated Device Technology Memory 71V25761S166PF

Description
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
Request a Quote Datasheet
Description
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V25761S166PF - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

128K X 36 3.3V Synchronous SRAM 2.5V I/O, Pipelined Outputs Burst Counter

Supplier's Site Datasheet
Memory - 71V25761S166PF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x20)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x20)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V25761S166PF 71V25761S166PF
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Access Time 3.5 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4DDR264M72 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
View Details
Memory - Controllers - DP8422AVX-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
View Details
2 suppliers
Memory - 16-3603-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 71V2576YS150PF - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.8 ns
Density 4500 kbits
View Details