Integrated Device Technology 3.3V, 32K X 8 Asynchronous Static RAM 71V256SA20PZGI

Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

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3.3V, 32K X 8 Asynchronous Static RAM - 71V256SA20PZGI - Integrated Device Technology
San Jose, CA, USA
3.3V, 32K X 8 Asynchronous Static RAM
71V256SA20PZGI
3.3V, 32K X 8 Asynchronous Static RAM 71V256SA20PZGI
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V256SA20PZGI
Product Name 3.3V, 32K X 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256 kbits
Number of Words 32 k
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