Integrated Device Technology 3.3V, 32K X 8 Asynchronous Static RAM 71V256SA15YG8

Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Suppliers

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Product
Description
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3.3V, 32K X 8 Asynchronous Static RAM - 71V256SA15YG8 - Integrated Device Technology
San Jose, CA, USA
3.3V, 32K X 8 Asynchronous Static RAM
71V256SA15YG8
3.3V, 32K X 8 Asynchronous Static RAM 71V256SA15YG8
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V256SA15YG8 - 125127-71V256SA15YG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V256SA15YG8
125127-71V256SA15YG8
Memory - SRAM - 71V256SA15YG8 125127-71V256SA15YG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 125127-71V256SA15YG8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 256Kb (32K x 8) Access Time: 15ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 28-SOJ Supply Voltage - Operating: 3 V to 3.6 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 125127-71V256SA15YG8
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 15ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 28-SOJ
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V256SA15YG8 125127-71V256SA15YG8
Product Name 3.3V, 32K X 8 Asynchronous Static RAM Memory - SRAM - 71V256SA15YG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 15 ns 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 32 k
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