Integrated Device Technology 3.3V, 32K X 8 Asynchronous Static RAM 71V256SA15YG

Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Suppliers

Company
Product
Description
Supplier Links
3.3V, 32K X 8 Asynchronous Static RAM - 71V256SA15YG - Integrated Device Technology
San Jose, CA, USA
3.3V, 32K X 8 Asynchronous Static RAM
71V256SA15YG
3.3V, 32K X 8 Asynchronous Static RAM 71V256SA15YG
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V256SA15YG - 1006991-71V256SA15YG - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V256SA15YG
1006991-71V256SA15YG
Memory - SRAM - 71V256SA15YG 1006991-71V256SA15YG
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 1006991-71V256SA15YG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 256Kb (32K x 8) Access Time: 15ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 28-SOJ Supply Voltage - Operating: 3 V to 3.6 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 1006991-71V256SA15YG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 15ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 28-SOJ
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Fort Worth, TX, USA
256K (32KX8) 3.3V FAST ASYNC SRAM
70216421
256K (32KX8) 3.3V FAST ASYNC SRAM 70216421
256K (32KX8) 3.3V FAST ASYNC SRAM

256K (32KX8) 3.3V FAST ASYNC SRAM

Supplier's Site

Technical Specifications

  Integrated Device Technology Win Source Electronics Allied Electronics, Inc.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V256SA15YG 1006991-71V256SA15YG 70216421
Product Name 3.3V, 32K X 8 Asynchronous Static RAM Memory - SRAM - 71V256SA15YG 256K (32KX8) 3.3V FAST ASYNC SRAM
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip
Access Time 15 ns 15 ns 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to ? C (32 to ? F)
Density 256 kbits 256 kbits
Number of Words 32 k
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