Integrated Device Technology 3.3V, 32K X 8 Asynchronous Static RAM 71V256SA12PZGI8

Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V, 32K X 8 Asynchronous Static RAM - 71V256SA12PZGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V, 32K X 8 Asynchronous Static RAM
71V256SA12PZGI8
3.3V, 32K X 8 Asynchronous Static RAM 71V256SA12PZGI8
The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V256SA12PZGI8
Product Name 3.3V, 32K X 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256 kbits
Number of Words 32 k
Unlock Full Specs
to access all available technical data

Similar Products

 - 93425DMQB30 - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
3 suppliers
Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details