The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Standard SRAM, 32KX8, 12ns, CMOS, PDSO28
IC SRAM 256KBIT PARALLEL 28TSOP
SRAM - Asynchronous Memory IC 256Kbit Parallel 12 ns 28-TSOP
| Integrated Device Technology | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V256SA12PZG | 71V256SA12PZG | 71V256SA12PZG | 71V256SA12PZG |
| Product Name | 3.3V, 32K X 8 Asynchronous Static RAM | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 12 ns | 12 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 256 kbits | 256 kbits | 256 kbits | |
| Number of Words | 32 k |
