Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 71V2546S150PFG

Description
The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

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3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O - 71V2546S150PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
71V2546S150PFG
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 71V2546S150PFG
The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V2546S150PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V2546S150PFG
Integrated Circuits (ICs) - Memory - Memory 71V2546S150PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V2546S150PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V2546S150PFG 71V2546S150PFG 71V2546S150PFG
Product Name 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 150 MHz 150 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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