Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA12TYGI

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA12TYGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA12TYGI
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA12TYGI
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V124SA12TYGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V124SA12TYGI
Integrated Circuits (ICs) - Memory 71V124SA12TYGI
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site
Memory - 71V124SA12TYGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 32-SOJ

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V124SA12TYGI 71V124SA12TYGI 71V124SA12TYGI
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY14B101K-SP45XC-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000 kbits
View Details
2 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71024S12YGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details