Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA12PHG

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA12PHG - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA12PHG
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA12PHG
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V124SA12PHG
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
Memory Category SRAM Chip
Access Time 12 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1024 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962F1120201QXA - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Density 72000 kbits
View Details
2 suppliers
Memory - RAM - MT5C1008F45L/883C - 1215637-MT5C1008F45L/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
Memory - 5962-8858702VA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 4 kbits
View Details
Flash Memory - 1882527 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details