The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 32-TSOP II
IC SRAM 1MBIT PARALLEL 32TSOP II
| Integrated Device Technology | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V124SA10PHGI | 71V124SA10PHGI | 71V124SA10PHGI |
| Product Name | 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 10 ns | 10 ns | 10 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
| Density | 1024 kbits | 1000 kbits | 1000 kbits |
| Number of Words | 128 k |
