Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA10PHG

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA10PHG - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA10PHG
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA10PHG
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V124SA10PHG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V124SA10PHG
Integrated Circuits (ICs) - Memory 71V124SA10PHG
71V124 - 3.3V STATIC RAM 1 MEG (

71V124 - 3.3V STATIC RAM 1 MEG (

Supplier's Site
Memory - 71V124SA10PHG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 32-TSOP II

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 32-TSOP II

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V124SA10PHG 71V124SA10PHG 71V124SA10PHG
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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