Integrated Device Technology 3.3V 64K x 16 Bit Asynchronous Static RAM 71V016SA20YGI

Description
The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Description
The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Suppliers

Company
Product
Description
Supplier Links
3.3V 64K x 16 Bit Asynchronous Static RAM - 71V016SA20YGI - Integrated Device Technology
San Jose, CA, USA
3.3V 64K x 16 Bit Asynchronous Static RAM
71V016SA20YGI
3.3V 64K x 16 Bit Asynchronous Static RAM 71V016SA20YGI
The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
 - 71V016SA20YGI - Rochester Electronics
Newburyport, MA, United States
1 Meg (64K X 16-Bit) 3.3V Static RAM

1 Meg (64K X 16-Bit) 3.3V Static RAM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V016SA20YGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V016SA20YGI
Integrated Circuits (ICs) - Memory - Memory 71V016SA20YGI
IC SRAM 1MBIT PARALLEL 44SOJ

IC SRAM 1MBIT PARALLEL 44SOJ

Supplier's Site
Memory - 71V016SA20YGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ

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Technical Specifications

  Integrated Device Technology Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V016SA20YGI 71V016SA20YGI 71V016SA20YGI 71V016SA20YGI
Product Name 3.3V 64K x 16 Bit Asynchronous Static RAM Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1024 kbits 0 kbits 1000 kbits 1000 kbits
Number of Words 64 k
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