Integrated Device Technology 3.3V 64K x 16 Bit Asynchronous Static RAM 71V016SA12BFI

Description
The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet
Description
The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 64K x 16 Bit Asynchronous Static RAM - 71V016SA12BFI - Integrated Device Technology
San Jose, CA, USA
3.3V 64K x 16 Bit Asynchronous Static RAM
71V016SA12BFI
3.3V 64K x 16 Bit Asynchronous Static RAM 71V016SA12BFI
The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V016SA12BFI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V016SA12BFI
Integrated Circuits (ICs) - Memory 71V016SA12BFI
IC SRAM 1MBIT PARALLEL 48CABGA

IC SRAM 1MBIT PARALLEL 48CABGA

Supplier's Site
Memory - 71V016SA12BFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 48-CABGA (7x7)

SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 48-CABGA (7x7)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V016SA12BFI 71V016SA12BFI 71V016SA12BFI
Product Name 3.3V 64K x 16 Bit Asynchronous Static RAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 64 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71V25761YS200PFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.1 ns
Density 4500 kbits
View Details
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
 - 93L422DM - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type DIP; CDIP22
View Details
3 suppliers