Integrated Device Technology 2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75802S200BG

Description
The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.
Request a Quote Datasheet
Description
The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM - 71T75802S200BG - Integrated Device Technology
San Jose, CA, USA
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
71T75802S200BG
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75802S200BG
The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.

The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71T75802S200BG - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71T75802S200BG
Memory IC and Storage Component 774-71T75802S200BG
IC SRAM 18MBIT PARALLEL 119PBGA Product overview: 71T75802S200BG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71T75802S200BG can be used for catalog matching and distributor lookup.

IC SRAM 18MBIT PARALLEL 119PBGA Product overview: 71T75802S200BG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71T75802S200BG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71T75802S200BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71T75802S200BG
Integrated Circuits (ICs) - Memory - Memory 71T75802S200BG
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71T75802S200BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 200 MHz 3.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 200 MHz 3.2 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71T75802S200BG 774-71T75802S200BG 71T75802S200BG 71T75802S200BG 71T75802S200BG
Product Name 2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM - Synchronous, SDR (ZBT); SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 200 MHz 200 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18432 kbits 18000 kbits 18000 kbits 18000 kbits
Number of Words 1024 k
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - DP8421ATVX-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - 71256L35YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 256 kbits
View Details
Memory - 448-CY14B116S-BZ35XI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits
View Details
3 suppliers
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details