Integrated Device Technology 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S166BGI

Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
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Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
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Datasheet
Datasheet Summary
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The 71T75602S166BGI is a 2.5V synchronous ZBT,Ñ¢ SRAM memory device with a capacity of 18,874,368 bits, organized as 512K x 36 or 1M x 18. It operates at a high speed of 166 MHz, providing a clock-to-data access time of 3.5 ns. The ZBT,Ñ¢ feature allows for zero bus turnaround, eliminating dead cycles between read and write operations. The device includes a burst counter for four-word burst capability, with the option for linear or interleaved burst sequences. It features a single read/write control pin and an internally synchronized output buffer, which simplifies control signal management. The memory is packaged in a 119-ball grid array (BGA) format, compliant with JEDEC standards, and is available in both commercial and industrial temperature ranges. The device also supports a power-down mode controlled by the ZZ input, making it suitable for power-sensitive applications.

Datasheet Summary
Powered by GS/AI

The 71T75602S166BGI is a 2.5V synchronous ZBT,Ñ¢ SRAM memory device with a capacity of 18,874,368 bits, organized as 512K x 36 or 1M x 18. It operates at a high speed of 166 MHz, providing a clock-to-data access time of 3.5 ns. The ZBT,Ñ¢ feature allows for zero bus turnaround, eliminating dead cycles between read and write operations. The device includes a burst counter for four-word burst capability, with the option for linear or interleaved burst sequences. It features a single read/write control pin and an internally synchronized output buffer, which simplifies control signal management. The memory is packaged in a 119-ball grid array (BGA) format, compliant with JEDEC standards, and is available in both commercial and industrial temperature ranges. The device also supports a power-down mode controlled by the ZZ input, making it suitable for power-sensitive applications.

Suppliers

Company
Product
Description
Supplier Links
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM - 71T75602S166BGI - Integrated Device Technology
San Jose, CA, USA
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
71T75602S166BGI
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S166BGI
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71T75602S166BGI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71T75602S166BGI
Memory IC and Storage Component 774-71T75602S166BGI
IC SRAM 18MBIT PARALLEL 119PBGA Product overview: 71T75602S166BGI from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71T75602S166BGI can be used for catalog matching and distributor lookup.

IC SRAM 18MBIT PARALLEL 119PBGA Product overview: 71T75602S166BGI from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71T75602S166BGI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 71T75602S166BGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71T75602S166BGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71T75602S166BGI
Integrated Circuits (ICs) - Memory - Memory 71T75602S166BGI
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site

Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71T75602S166BGI 774-71T75602S166BGI 71T75602S166BGI 71T75602S166BGI
Product Name 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 166 MHz 166 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18432 kbits 18000 kbits 18000 kbits
Number of Words 512 k
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