Integrated Device Technology 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S133BGI

Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
Datasheet
Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM - 71T75602S133BGI - Integrated Device Technology
San Jose, CA, USA
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
71T75602S133BGI
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S133BGI
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71T75602S133BGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71T75602S133BGI
Integrated Circuits (ICs) - Memory 71T75602S133BGI
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71T75602S133BGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71T75602S133BGI 71T75602S133BGI 71T75602S133BGI
Product Name 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 133 MHz 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18432 kbits 18000 kbits 18000 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-672659\CY62157EV18LL-55BVXIT - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
View Details
BGA Memory IC and Storage Component - 736-PCI7402ZHK - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Operating Temperature 0 C (32 F)
Package Type BGA; BGA
View Details
2 suppliers