Integrated Device Technology 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S100BG

Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
Datasheet
Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
Datasheet

Suppliers

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Product
Description
Supplier Links
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM - 71T75602S100BG - Integrated Device Technology
San Jose, CA, USA
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
71T75602S100BG
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S100BG
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71T75602S100BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71T75602S100BG
Integrated Circuits (ICs) - Memory - Memory 71T75602S100BG
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71T75602S100BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 100 MHz 5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 100 MHz 5 ns 119-PBGA (14x22)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71T75602S100BG 71T75602S100BG 71T75602S100BG
Product Name 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 100 MHz 100 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18432 kbits 18000 kbits 18000 kbits
Number of Words 512 k
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