Integrated Device Technology Memory 71P72804S250BQG

Description
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 6.3 ns 165-CABGA (13x15)
Datasheet
Description
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 6.3 ns 165-CABGA (13x15)
Datasheet

Suppliers

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Product
Description
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Memory - 71P72804S250BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 6.3 ns 165-CABGA (13x15)

SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 6.3 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71P72804S250BQG - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71P72804S250BQG
Integrated Circuits (ICs) - Memory - Memory 71P72804S250BQG
IC SRAM 18MBIT PAR 165CABGA

IC SRAM 18MBIT PAR 165CABGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number 71P72804S250BQG 71P72804S250BQG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 6.3 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
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