Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164S25TDB

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164S25TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164S25TDB
5.0V 8K x 8 Asynchronous Static RAM 7164S25TDB
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 7164S25TDB - 776572-7164S25TDB - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 7164S25TDB
776572-7164S25TDB
Memory - SRAM - 7164S25TDB 776572-7164S25TDB
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776572-7164S25TDB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 125°C (TA) Package: 28-CDIP (0.300", 7.62mm) Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 64Kb (8K x 8) Access Time: 25ns Family Name: 7164S Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Manufacturer Package: 28-CDIP Alternative Parts (Cross-Reference): 5962-3829428MZA; 5962-3829428MXA; 5962-3829426MZA; 5962-3829409MZX; ECCN: 3A001.a.2.c Country of Origin: Taiwan Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776572-7164S25TDB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 28-CDIP (0.300", 7.62mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 25ns
Family Name: 7164S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Manufacturer Package: 28-CDIP
Alternative Parts (Cross-Reference): 5962-3829428MZA; 5962-3829428MXA; 5962-3829426MZA; 5962-3829409MZX;
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - 7164S25TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 25 ns 28-CDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 25 ns 28-CDIP

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Technical Specifications

  Integrated Device Technology Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 7164S25TDB 776572-7164S25TDB 7164S25TDB
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory - SRAM - 7164S25TDB Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 25 ns 25 ns 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 64 kbits 64 kbits
Number of Words 8 k
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