Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164S20YGI

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Datasheet Summary
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The Quarktwin Technology Ltd. 7164S20YGI is a high-speed static RAM memory device with a capacity of 64K bits, organized as 8K x 8 bits. It features address access times of 20 ns, making it suitable for applications requiring fast data retrieval. The device operates on a single 5V supply and is fully TTL-compatible, simplifying integration into various systems. This memory chip is available in multiple package types, including 28-pin DIP, CERDIP, and SOJ, catering to different design requirements. It is designed for military, industrial, and commercial temperature ranges, with military-grade versions compliant with MIL-STD-883, Class B, ensuring high reliability in demanding environments. Additionally, the low-power version supports battery backup operation with a data retention voltage as low as 2V, making it ideal for applications where power conservation is critical. The device also features three-state outputs and a low-power standby mode, enhancing its versatility in various applications.

Datasheet Summary
Powered by GS/AI

The Quarktwin Technology Ltd. 7164S20YGI is a high-speed static RAM memory device with a capacity of 64K bits, organized as 8K x 8 bits. It features address access times of 20 ns, making it suitable for applications requiring fast data retrieval. The device operates on a single 5V supply and is fully TTL-compatible, simplifying integration into various systems. This memory chip is available in multiple package types, including 28-pin DIP, CERDIP, and SOJ, catering to different design requirements. It is designed for military, industrial, and commercial temperature ranges, with military-grade versions compliant with MIL-STD-883, Class B, ensuring high reliability in demanding environments. Additionally, the low-power version supports battery backup operation with a data retention voltage as low as 2V, making it ideal for applications where power conservation is critical. The device also features three-state outputs and a low-power standby mode, enhancing its versatility in various applications.

Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164S20YGI - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164S20YGI
5.0V 8K x 8 Asynchronous Static RAM 7164S20YGI
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 7164S20YGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
7164S20YGI
Integrated Circuits (ICs) - Memory 7164S20YGI
IC SRAM 64KBIT PARALLEL 28SOJ

IC SRAM 64KBIT PARALLEL 28SOJ

Supplier's Site
Memory - 7164S20YGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 20 ns 28-SOJ

SRAM - Asynchronous Memory IC 64Kbit Parallel 20 ns 28-SOJ

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 7164S20YGI 7164S20YGI 7164S20YGI
Product Name 5.0V 8K x 8 Asynchronous Static RAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64 kbits 64 kbits 64 kbits
Number of Words 8 k
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