Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164S20YG8

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Suppliers

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Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164S20YG8 - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164S20YG8
5.0V 8K x 8 Asynchronous Static RAM 7164S20YG8
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 7164S20YG8 - 135152-7164S20YG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 7164S20YG8
135152-7164S20YG8
Memory - SRAM - 7164S20YG8 135152-7164S20YG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 135152-7164S20YG8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 64Kb (8K x 8) Access Time: 20ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 28-SOJ Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 135152-7164S20YG8
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 20ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 28-SOJ
Supply Voltage - Operating: 4.5 V to 5.5 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 7164S20YG8 135152-7164S20YG8
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory - SRAM - 7164S20YG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 64 kbits
Number of Words 8 k
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