Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164S100DB

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Suppliers

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Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164S100DB - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164S100DB
5.0V 8K x 8 Asynchronous Static RAM 7164S100DB
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 7164S100DB - 776570-7164S100DB - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 7164S100DB
776570-7164S100DB
Memory - SRAM - 7164S100DB 776570-7164S100DB
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776570-7164S100DB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 125°C (TA) Package: 28-CDIP (0.600", 15.24mm) Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 64Kb (8K x 8) Access Time: 100ns Family Name: 7164S Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Manufacturer Package: 28-CerDip Alternative Parts (Cross-Reference): P4C164-150CWMB; P4C164L-120CWMB; P4C164-120CWMB; MT5C6408C-70/XT; ECCN: 3A001.a.2.c Country of Origin: Taiwan Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776570-7164S100DB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 28-CDIP (0.600", 15.24mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 100ns
Family Name: 7164S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Manufacturer Package: 28-CerDip
Alternative Parts (Cross-Reference): P4C164-150CWMB; P4C164L-120CWMB; P4C164-120CWMB; MT5C6408C-70/XT;
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 7164S100DB 776570-7164S100DB
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory - SRAM - 7164S100DB
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 100 ns 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 64 kbits
Number of Words 8 k
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