Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164L70TDB

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164L70TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164L70TDB
5.0V 8K x 8 Asynchronous Static RAM 7164L70TDB
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 7164L70TDB - 776569-7164L70TDB - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 7164L70TDB
776569-7164L70TDB
Memory - SRAM - 7164L70TDB 776569-7164L70TDB
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776569-7164L70TDB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 125°C (TA) Package: 28-CDIP (0.300", 7.62mm) Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 64Kb (8K x 8) Access Time: 70ns Family Name: 7164L Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Manufacturer Package: 28-CDIP Alternative Parts (Cross-Reference): MT5C6408C-70/XT; MT5C6408C-70L/XT; MT5C6408C-70L/883C; 5962-3829406MZA ; ECCN: 3A001.a.2.c Country of Origin: Taiwan Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776569-7164L70TDB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 28-CDIP (0.300", 7.62mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 70ns
Family Name: 7164L
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Manufacturer Package: 28-CDIP
Alternative Parts (Cross-Reference): MT5C6408C-70/XT; MT5C6408C-70L/XT; MT5C6408C-70L/883C; 5962-3829406MZA ;
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - 7164L70TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 70 ns 28-CDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 70 ns 28-CDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 7164L70TDB - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
7164L70TDB
Integrated Circuits (ICs) - Memory - Memory 7164L70TDB
IC SRAM 64KBIT PARALLEL 28CDIP

IC SRAM 64KBIT PARALLEL 28CDIP

Supplier's Site

Technical Specifications

  Integrated Device Technology Win Source Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 7164L70TDB 776569-7164L70TDB 7164L70TDB 7164L70TDB
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory - SRAM - 7164L70TDB Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 70 ns 70 ns 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 64 kbits 64 kbits 64 kbits
Number of Words 8 k
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