Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164L55DB

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164L55DB - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164L55DB
5.0V 8K x 8 Asynchronous Static RAM 7164L55DB
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 7164L55DB
Product Name 5.0V 8K x 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64 kbits
Number of Words 8 k
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882517 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 5962-8854102FA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 60 ns
Density 2 kbits
View Details
Memory - NM27C010N200 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
Memory - AS5LC512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details