Integrated Device Technology Memory 71256SA35SOG1

Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-SOIC
Datasheet
Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71256SA35SOG1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-SOIC

SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71256SA35SOG1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71256SA35SOG1
Integrated Circuits (ICs) - Memory 71256SA35SOG1
SRAM 256K (32K X 8-BIT)

SRAM 256K (32K X 8-BIT)

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 71256SA35SOG1 71256SA35SOG1
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 35 ns 35 ns
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQ-AU/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - 6116LA20TPGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details
Memory - 40060283 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details