Integrated Device Technology 5.0V 32K x 8 Asynchronous Static RAM 71256S35DB

Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
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Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Request a Quote Datasheet

Suppliers

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Product
Description
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5.0V 32K x 8 Asynchronous Static RAM - 71256S35DB - Integrated Device Technology
San Jose, CA, USA
5.0V 32K x 8 Asynchronous Static RAM
71256S35DB
5.0V 32K x 8 Asynchronous Static RAM 71256S35DB
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 71256S35DB - 776546-71256S35DB - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71256S35DB
776546-71256S35DB
Memory - SRAM - 71256S35DB 776546-71256S35DB
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776546-71256S35DB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 125°C (TA) Package: 28-CDIP (0.600", 15.24mm) Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 256Kb (32K x 8) Access Time: 35ns Family Name: 71256S Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Manufacturer Package: 28-CerDip Alternative Parts (Cross-Reference): P4C1256-12CWMB; P4C1256-35CWCLF; P4C1256L-35DWCLF; P4C1256-35DWI; Introduction Date: August 01, 1996 ECCN: 3A001.a.2.c Country of Origin: Taiwan Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776546-71256S35DB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 28-CDIP (0.600", 15.24mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 35ns
Family Name: 71256S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Manufacturer Package: 28-CerDip
Alternative Parts (Cross-Reference): P4C1256-12CWMB; P4C1256-35CWCLF; P4C1256L-35DWCLF; P4C1256-35DWI;
Introduction Date: August 01, 1996
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71256S35DB - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71256S35DB
Integrated Circuits (ICs) - Memory - Memory 71256S35DB
IC SRAM 256KBIT PARALLEL 28CDIP

IC SRAM 256KBIT PARALLEL 28CDIP

Supplier's Site
Memory - 71256S35DB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Win Source Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71256S35DB 776546-71256S35DB 71256S35DB 71256S35DB
Product Name 5.0V 32K x 8 Asynchronous Static RAM Memory - SRAM - 71256S35DB Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 35 ns 35 ns 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 256 kbits 256 kbits 256 kbits
Number of Words 32 k
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