The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
IC SRAM 256KBIT PARALLEL 28CDIP Product overview: 71256S35DB from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71256S35DB can be used for catalog matching and distributor lookup.
Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776546-71256S35DB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 28-CDIP (0.600", 15.24mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 35ns
Family Name: 71256S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Manufacturer Package: 28-CerDip
Alternative Parts (Cross-Reference): P4C1256-12CWMB; P4C1256-35CWCLF; P4C1256L-35DWCLF; P4C1256-35DWI;
Introduction Date: August 01, 1996
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP
IC SRAM 256KBIT PARALLEL 28CDIP
| Integrated Device Technology | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71256S35DB | 774-71256S35DB | 776546-71256S35DB | 71256S35DB | 71256S35DB |
| Product Name | 5.0V 32K x 8 Asynchronous Static RAM | Memory IC and Storage Component | Memory - SRAM - 71256S35DB | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 35 ns | 35 ns | 35 ns | 35 ns | |
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | |
| Density | 256 kbits | 256 kbits | 256 kbits | ||
| Number of Words | 32 k |
