Integrated Device Technology 5.0V 32K x 8 Asynchronous Static RAM 71256L55TDB

Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet
Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 32K x 8 Asynchronous Static RAM - 71256L55TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 32K x 8 Asynchronous Static RAM
71256L55TDB
5.0V 32K x 8 Asynchronous Static RAM 71256L55TDB
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - 71256L55TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 55 ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kbit Parallel 55 ns 28-CDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71256L55TDB - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71256L55TDB
Integrated Circuits (ICs) - Memory - Memory 71256L55TDB
IC SRAM 256KBIT PARALLEL 28CDIP

IC SRAM 256KBIT PARALLEL 28CDIP

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71256L55TDB 71256L55TDB 71256L55TDB
Product Name 5.0V 32K x 8 Asynchronous Static RAM Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 256 kbits 256 kbits 256 kbits
Number of Words 32 k
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