Integrated Device Technology 5.0V 32K x 8 Asynchronous Static RAM 71256L55DB

Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
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Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
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Suppliers

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Product
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5.0V 32K x 8 Asynchronous Static RAM - 71256L55DB - Integrated Device Technology
San Jose, CA, USA
5.0V 32K x 8 Asynchronous Static RAM
71256L55DB
5.0V 32K x 8 Asynchronous Static RAM 71256L55DB
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 71256L55DB - 776543-71256L55DB - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71256L55DB
776543-71256L55DB
Memory - SRAM - 71256L55DB 776543-71256L55DB
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776543-71256L55DB Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 125°C (TA) Package: 28-CDIP (0.600", 15.24mm) Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 256Kb (32K x 8) Access Time: 55ns Family Name: 71256L Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Manufacturer Package: 28-CerDip Alternative Parts (Cross-Reference): P4C1256-12CWMB; 5962-8855203XX; HX6256RQRT; HX6256RQRC; Introduction Date: August 01, 1996 ECCN: 3A001.a.2.c Country of Origin: Taiwan Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776543-71256L55DB
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 28-CDIP (0.600", 15.24mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 55ns
Family Name: 71256L
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Manufacturer Package: 28-CerDip
Alternative Parts (Cross-Reference): P4C1256-12CWMB; 5962-8855203XX; HX6256RQRT; HX6256RQRC;
Introduction Date: August 01, 1996
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71256L55DB 776543-71256L55DB
Product Name 5.0V 32K x 8 Asynchronous Static RAM Memory - SRAM - 71256L55DB
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 55 ns 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 256 kbits
Number of Words 32 k
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