Integrated Device Technology 5.0V 32K x 8 Asynchronous Static RAM 71256L25YG

Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet
Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 32K x 8 Asynchronous Static RAM - 71256L25YG - Integrated Device Technology
San Jose, CA, USA
5.0V 32K x 8 Asynchronous Static RAM
71256L25YG
5.0V 32K x 8 Asynchronous Static RAM 71256L25YG
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71256L25YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71256L25YG
Integrated Circuits (ICs) - Memory 71256L25YG
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site
Memory - 71256L25YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 28-SOJ

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71256L25YG 71256L25YG 71256L25YG
Product Name 5.0V 32K x 8 Asynchronous Static RAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 25 ns 25 ns 25 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256 kbits 256 kbits 256 kbits
Number of Words 32 k
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