Integrated Device Technology 5.0V 32K x 8 Asynchronous Static RAM 71256L25YG

Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet
Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 32K x 8 Asynchronous Static RAM - 71256L25YG - Integrated Device Technology
San Jose, CA, USA
5.0V 32K x 8 Asynchronous Static RAM
71256L25YG
5.0V 32K x 8 Asynchronous Static RAM 71256L25YG
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71256L25YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71256L25YG
Integrated Circuits (ICs) - Memory 71256L25YG
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site
Memory - 71256L25YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 28-SOJ

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71256L25YG 71256L25YG 71256L25YG
Product Name 5.0V 32K x 8 Asynchronous Static RAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 25 ns 25 ns 25 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256 kbits 256 kbits 256 kbits
Number of Words 32 k
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - AS5SP128K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024 kbits
View Details
Memory IC and Storage Component - 736-DP8429D-MSP - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Memory - 585600-006-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers