Integrated Device Technology 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S20YG8

Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

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5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71124S20YG8 - Integrated Device Technology
San Jose, CA, USA
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71124S20YG8
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S20YG8
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71124S20YG8
Product Name 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
Memory Category SRAM Chip
Access Time 20 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1024 kbits
Number of Words 128 k
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