Integrated Device Technology 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S20YG

Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71124S20YG - Integrated Device Technology
San Jose, CA, USA
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71124S20YG
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S20YG
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - 71124S20YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71124S20YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71124S20YG
Integrated Circuits (ICs) - Memory - Memory 71124S20YG
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71124S20YG 71124S20YG 71124S20YG
Product Name 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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