Integrated Device Technology 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S15YGI

Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71124S15YGI - Integrated Device Technology
San Jose, CA, USA
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71124S15YGI
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S15YGI
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - 71124S15YGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71124S15YGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71124S15YGI
Integrated Circuits (ICs) - Memory 71124S15YGI
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71124S15YGI 71124S15YGI 71124S15YGI
Product Name 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 15 ns 15 ns 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8S512K32PECB - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SmartMedia Cards - 7723176 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64 kbits
View Details
SM28VLT32-HT 32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus - SM28VLT32SHKN - Texas Instruments
Specs
Memory Category Flash
Operating Temperature -55 to 210 C (-67 to 410 F)
Density 32000 kbits
View Details
3 suppliers