Integrated Device Technology 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S15YG

Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Suppliers

Company
Product
Description
Supplier Links
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71124S15YG - Integrated Device Technology
San Jose, CA, USA
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71124S15YG
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S15YG
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71124S15YG - 133945-71124S15YG - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71124S15YG
133945-71124S15YG
Memory - SRAM - 71124S15YG 133945-71124S15YG
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 133945-71124S15YG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 15ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 32-SOJ Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 133945-71124S15YG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 15ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 32-SOJ
Supply Voltage - Operating: 4.5 V to 5.5 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - 71124S15YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71124S15YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71124S15YG
Integrated Circuits (ICs) - Memory - Memory 71124S15YG
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site

Technical Specifications

  Integrated Device Technology Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71124S15YG 133945-71124S15YG 71124S15YG 71124S15YG
Product Name 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory - SRAM - 71124S15YG Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 15 ns 15 ns 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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