Integrated Device Technology 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S12YG8

Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Suppliers

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Product
Description
Supplier Links
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71124S12YG8 - Integrated Device Technology
San Jose, CA, USA
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71124S12YG8
5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71124S12YG8
The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL -compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71124S12YG8 - 807898-71124S12YG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71124S12YG8
807898-71124S12YG8
Memory - SRAM - 71124S12YG8 807898-71124S12YG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 807898-71124S12YG8 Packaging: Reel Mounting Style: SMD Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 12ns Supplier Device Package: 32-SOJ Temperature Range - Operating: 0°C ~ 70°C Memory Format: SRAM Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Manufacturer Package: 32-BSOJ Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 3 (168 Hours) Supply Voltage (V): 4.5V ~ 5.5V Part Number Series: IDT71124

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 807898-71124S12YG8
Packaging: Reel
Mounting Style: SMD
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 12ns
Supplier Device Package: 32-SOJ
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 32-BSOJ
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Supply Voltage (V): 4.5V ~ 5.5V
Part Number Series: IDT71124

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71124S12YG8 807898-71124S12YG8
Product Name 5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory - SRAM - 71124S12YG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1024 kbits
Number of Words 128 k
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