Integrated Device Technology 5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout 71024S20YG

Description
The 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL -compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL -compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout - 71024S20YG - Integrated Device Technology
San Jose, CA, USA
5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout
71024S20YG
5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout 71024S20YG
The 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL -compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL -compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1229138-71024S20YG - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1229138-71024S20YG
Integrated Circuits (ICs) - Memory 1229138-71024S20YG
Win Source Part Number: 1229138-71024S20YG Category: Integrated Circuits (ICs)>Memory Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 20 ns Voltage - Supply: 4.5V ~ 5.5V Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 51 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Other Names: 2156-71024S20YG,IDTI DT71024S20YG Base Product Number: 71024S

Win Source Part Number: 1229138-71024S20YG
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 20 ns
Voltage - Supply: 4.5V ~ 5.5V
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 51 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Other Names: 2156-71024S20YG,IDTIDT71024S20YG
Base Product Number: 71024S

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71024S20YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71024S20YG
Integrated Circuits (ICs) - Memory 71024S20YG
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site
Memory - 71024S20YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71024S20YG 1229138-71024S20YG 71024S20YG 71024S20YG
Product Name 5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1024 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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