Integrated Device Technology Memory 71016S20Y

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ
  • Memory - 71016S20Y - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71016S20Y - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
71016S20Y
Memory 71016S20Y
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 44-SOJ

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 71016S20Y
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882727P
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details
Memory - MPSTIBPAL22V10/15 - Quarktwin Technology Ltd.
Texas Instruments
Memory
MPSTIBPAL22V10/15
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821502VXF - 5962R1821502VXF - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821502VXF
5962R1821502VXF
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details
Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXxxSMSxxxxPxxxxx-xx/x
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details