Integrated Device Technology 512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 70T633S12BFI8

Description
The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1 ) permit the on-chip circuitry of each port to enter a very low standby power mode.
Datasheet
Description
The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1 ) permit the on-chip circuitry of each port to enter a very low standby power mode.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's - 70T633S12BFI8 - Integrated Device Technology
San Jose, CA, USA
512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
70T633S12BFI8
512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 70T633S12BFI8
The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1 ) permit the on-chip circuitry of each port to enter a very low standby power mode.

The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1 ) permit the on-chip circuitry of each port to enter a very low standby power mode.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 70T633S12BFI8
Product Name 512K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
Memory Category DPRAM
Logic Family TTL
Access Time 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 9216 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - 100142DC - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Density 0 kbits
Supply Voltage Through Hole
View Details
Memory - 9021981 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details