Integrated Device Technology 512K x 36 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 70T3539MS133BCGI

Description
The 70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T353M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.
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Description
The 70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T353M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.
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512K x 36 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's - 70T3539MS133BCGI - Integrated Device Technology
San Jose, CA, USA
512K x 36 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
70T3539MS133BCGI
512K x 36 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 70T3539MS133BCGI
The 70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T353M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.

The 70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T353M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.

Supplier's Site Datasheet
Memory - SRAM - 70T3539MS133BCGI - 776526-70T3539MS133BCGI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 70T3539MS133BCGI
776526-70T3539MS133BCGI
Memory - SRAM - 70T3539MS133BCGI 776526-70T3539MS133BCGI
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776526-70T3539MS133B CGI Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 256-LBGA Mounting: SMD Technology: SRAM - Dual Port, Synchronous Operating Supply Voltage: 2.4 V ~ 2.6 V Memory Type: Volatile Memory Size: 18Mb (512K x 36) Access Time: 4.2ns Family Name: 70T3539MS Categories: Integrated Circuits (ICs) Memory Format: SRAM Clock Frequency: 133MHz Memory Interface: Parallel Manufacturer Package: 256-CABGA (17x17) Alternative Parts (Cross-Reference): CYD18S36V18-167BBAIT ; CYD18S36V18-200BBAXI ; CYD18S36V18-167BBAI; CYD18S36V18-167BBIES ; Introduction Date: October 08, 2003 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776526-70T3539MS133BCGI
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 256-LBGA
Mounting: SMD
Technology: SRAM - Dual Port, Synchronous
Operating Supply Voltage: 2.4 V ~ 2.6 V
Memory Type: Volatile
Memory Size: 18Mb (512K x 36)
Access Time: 4.2ns
Family Name: 70T3539MS
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Clock Frequency: 133MHz
Memory Interface: Parallel
Manufacturer Package: 256-CABGA (17x17)
Alternative Parts (Cross-Reference): CYD18S36V18-167BBAIT; CYD18S36V18-200BBAXI; CYD18S36V18-167BBAI; CYD18S36V18-167BBIES;
Introduction Date: October 08, 2003
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 70T3539MS133BCGI 776526-70T3539MS133BCGI
Product Name 512K x 36 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's Memory - SRAM - 70T3539MS133BCGI
Memory Category DPRAM Volatile; SRAM Chip
Logic Family TTL
Data Rate 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18432 kbits
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