Integrated Device Technology 512K x 18 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 70T3339S200BCG

Description
The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.
Datasheet
Description
The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
512K x 18 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's - 70T3339S200BCG - Integrated Device Technology
San Jose, CA, USA
512K x 18 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
70T3339S200BCG
512K x 18 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 70T3339S200BCG
The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.

The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device ( VDD ) is at 2.5V.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 70T3339S200BCG
Product Name 512K x 18 Sync, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's
Memory Category DPRAM
Logic Family TTL
Data Rate 200 MHz
Operating Temperature 0 to 70 C (32 to 158 F)
Density 9216 kbits
Unlock Full Specs
to access all available technical data

Similar Products

CD54HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD54HC40105F3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP
View Details
3 suppliers
Memory - EEPROM - 5962-3826701MXAC7200 - 907565-5962-3826701MXAC7200 - Win Source Electronics
Specs
Memory Category EEPROM
View Details
2 suppliers
Memory - 584271-001-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details