Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116SA20TDB

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5.0V 2K x 8 Asynchronous Static RAM - 6116SA20TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116SA20TDB
5.0V 2K x 8 Asynchronous Static RAM 6116SA20TDB
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

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Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 6116SA20TDB
Product Name 5.0V 2K x 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 20 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16 kbits
Number of Words 2 k
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