Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116SA20TDB

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116SA20TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116SA20TDB
5.0V 2K x 8 Asynchronous Static RAM 6116SA20TDB
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 6116SA20TDB
Product Name 5.0V 2K x 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 20 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16 kbits
Number of Words 2 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-CY62126DV30LL-70ZXI - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 70 ns
Cycle Time 70 ns
View Details
Flash Memory - 1882874 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 6116LA35SO - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 16 kbits
View Details