Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116SA150DB

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116SA150DB - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116SA150DB
5.0V 2K x 8 Asynchronous Static RAM 6116SA150DB
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 6116SA150DB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
6116SA150DB
Integrated Circuits (ICs) - Memory 6116SA150DB
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site
Memory - 6116SA150DB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 150 ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 150 ns 24-CDIP

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 6116SA150DB 6116SA150DB 6116SA150DB
Product Name 5.0V 2K x 8 Asynchronous Static RAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 150 ns 150 ns 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 16 kbits 16 kbits 16 kbits
Number of Words 2 k
Unlock Full Specs
to access all available technical data

Similar Products

 - JM38510/23106BEA - Rochester Electronics
Specs
Memory Category SRAM Chip
View Details
3 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
Memory - CY62128BNLL-70SXET-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 1000 kbits
View Details
3 suppliers