The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
5.0V 2K x 8 Asynchronous Static RAM
SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP
IC SRAM 16KBIT PARALLEL 24CDIP
| Integrated Device Technology | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 6116SA120TDB | 6116SA120TDB | 6116SA120TDB | 6116SA120TDB |
| Product Name | 5.0V 2K x 8 Asynchronous Static RAM | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 120 ns | 120 ns | ||
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | ||
| Density | 16 kbits | 16 kbits | 16 kbits | |
| Number of Words | 2 k |
