Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116SA120TDB

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116SA120TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116SA120TDB
5.0V 2K x 8 Asynchronous Static RAM 6116SA120TDB
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Singapore
Memory IC and Storage Component
774-6116SA120TDB
Memory IC and Storage Component 774-6116SA120TDB
IC SRAM 16KBIT PARALLEL 24CDIP Product overview: 6116SA120TDB from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-6116SA120TDB can be used for catalog matching and distributor lookup.

IC SRAM 16KBIT PARALLEL 24CDIP Product overview: 6116SA120TDB from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-6116SA120TDB can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - 6116SA120TDB - Rochester Electronics
Newburyport, MA, United States
5.0V 2K x 8 Asynchronous Static RAM

5.0V 2K x 8 Asynchronous Static RAM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 6116SA120TDB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
6116SA120TDB
Integrated Circuits (ICs) - Memory - Memory 6116SA120TDB
IC SRAM 16KBIT PARALLEL 24CDIP

IC SRAM 16KBIT PARALLEL 24CDIP

Supplier's Site
Memory - 6116SA120TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 6116SA120TDB 774-6116SA120TDB 6116SA120TDB 6116SA120TDB 6116SA120TDB
Product Name 5.0V 2K x 8 Asynchronous Static RAM Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 120 ns 120 ns 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 16 kbits 16 kbits 16 kbits
Number of Words 2 k
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