The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776515-6116LA45TDB
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 125°C (TA)
Package: 24-CDIP (0.300", 7.62mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 16Kb (2K x 8)
Access Time: 45ns
Family Name: 6116LA
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Manufacturer Package: 24-CDIP
Alternative Parts (Cross-Reference): P4C116-12DM; P4C116-10DMB; P4C116L-12DM; P4C116L-10DMB;
Introduction Date: March 01, 1996
ECCN: 3A001.a.2.c
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
| Integrated Device Technology | Win Source Electronics | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | 6116LA45TDB | 776515-6116LA45TDB |
| Product Name | 5.0V 2K x 8 Asynchronous Static RAM | Memory - SRAM - 6116LA45TDB |
| Memory Category | SRAM Chip | Volatile; SRAM Chip |
| Access Time | 45 ns | 45 ns |
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) |
| Density | 16 kbits | |
| Number of Words | 2 k |
