Integrated Device Technology Memory 6116LA35TPG

Description
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-PDIP
Datasheet
Description
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-PDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 6116LA35TPG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-PDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-PDIP

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 6116LA35TPG
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 1 kbits
View Details
FIFOs Memory - SN74ACT7200L20NP - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Density 2 kbits
Package Type DIP; 28-DIP (0.300\", 7.62mm)
View Details
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory IC and Storage Component - 774-CY14B256K-SP45XI - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category NVSRAM; Non-Volatile; SRAM Chip
Access Time 45 ns
Cycle Time 45 ns
View Details
3 suppliers